Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 15, Issue 47, Pages 20611-20617Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3cp53598c
Keywords
-
Funding
- MEXT [23684028, 22244045, 24654105, 24550054]
- Japan Science and Technology Agency (JST)
- JST
- Okayama University/MEXT
- program for promoting the enhancement of research universities
- Grants-in-Aid for Scientific Research [24654105, 23684028, 24550054] Funding Source: KAKEN
Ask authors/readers for more resources
Field-effect transistors (FETs) based on [6]phenacene thin films were fabricated with SiO2 and parylene gate dielectrics. These FET devices exhibit field-effect mobility in the saturation regime as high as 7.4 cm(2) V-1 s(-1), which is one of the highest reported values for organic thin-film FETs. The two- and four-probe mobilities in the linear regime display nearly similar values, suggesting negligible contact resistance at 300 K. FET characteristics were investigated using two-probe and four-probe measurement modes at 50-300 K. The two-probe mobility of the saturation regime can be explained by the multiple shallow trap and release model, while the intrinsic mobility obtained by the four-probe measurement in the linear regime is better explained by the phenomenon of transport with charge carrier scattering at low temperatures. The FET device fabricated with a parylene gate dielectric on polyethylene terephthalate possesses both transparency and flexibility, implying feasibility of practical application of [6] phenacene FETs in flexible/transparent electronics. N-channel FET characteristics were also achieved in the [6] phenacene thin-film FETs using metals that possess a small work function for use as source/drain electrodes.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available