Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 15, Issue 8, Pages 2660-2664Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3cp44027c
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Funding
- NRF [2012-0000126]
- NRF of Korea [2012M3A7B4034985]
- Brain Korea 21 Program
- Higher Education Commission (HEC) of Pakistan
- National Research Foundation of Korea [2009-0079462] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We have fabricated transparent top-gate ZnO nanowire (NW) field effect transistors (FETs) on glass and measured their trap density-of-states (DOS) at the dielectric/ZnO NWinterface with monochromatic photon beams during their operation. Our photon-probe method showed clear signatures of charge trap DOS at the interface, located near 2.3, 2.7, and 2.9 eV below the conduction band edge. The DOS information was utilized for the photo-detecting application of our transparent NW-FETs, which demonstrated fast and sensitive photo-detection of visible lights.
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