Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 15, Issue 28, Pages 11926-11930Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3cp51043c
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Funding
- U.S. Domestic Nuclear Detection Office [HSHQDC-07-C-0039, HSHQDC-10-C-00210]
- RMD [C07-43]
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The kinetics for Schottky defect (Tl and Br vacancy pair) formation and annihilation in ionically conducting TlBr are characterized through a temperature induced conductivity relaxation technique. Near room temperature, defect generation-annihilation was found to take on the order of hours before equilibrium was reached after a step change in temperature, and that mechanical damage imparted on the sample rapidly increases this rate. The rate limiting step to Schottky defect formation-annihilation is identified as being the migration of lower mobility Tl (versus Br), with an estimate for source-sink density derived from calculated diffusion lengths. This study represents one of the first investigations of Schottky defect generation-annihilation kinetics and demonstrates its utility in quantifying detrimental mechanical damage in radiation detector materials.
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