Nonlinear electrical grain boundary properties in proton conducting Y-BaZrO3 supporting the space charge depletion model

The overall proton conductivity of polycrystalline acceptor-doped BaZrO3 is limited by the high resistivity of its grain boundaries. To investigate the nature of the electrical response of the grain boundaries as a function of the DC bias, Y-doped BaZrO3 ceramics with a very large grain size (up to 200 mm) have been prepared in an infrared image furnace. The grains are so large that even individual grain boundaries can be addressed by microelectrodes. DC voltage-dependent resistance and capacitance of the grain boundaries are discussed in terms of the space charge model. The results corroborate carrier depletion (OHO center dot, h(center dot), V-O(center dot center dot)) as origin of the pronounced grain boundary resistance. This picture fits well into the space charge scenario found for various related oxide materials, and leads to strategies for improving grain boundary conductivity.