4.6 Article

Controllable fabrication and broadband near-infrared luminescence of various Ni2+-activated ZnAl2O4 nanostructures by a single-nozzle electrospinning technique

Journal

PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 14, Issue 39, Pages 13594-13600

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c2cp42235b

Keywords

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Funding

  1. National Natural Science Foundation of China [51102096, 51072054, 51072060, 51132004]
  2. Fundamental Research Funds for the Central Universities [2011ZZ0001, 2011ZB0001, 2011ZP0002, 2012ZB0003]
  3. Guangdong Natural Science Foundation [S2011030001349, 1045106410104887]
  4. Open research fund of CAS Key Laboratory of Renewable Energy and Gas Hydrate [KLREGHy007k6]
  5. Fok Ying Tong Education Foundation [132004]
  6. Chinese Program for New Century Excellent Talents in University [NCET-11-0158]
  7. National Basic Research Program of China [2011CB808100]
  8. UIRT of Guangdong Province

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By finely tuning the electrospun parameters (feeding rate of solution, working voltage and distance, etc.) and concentration of inorganic salts, various ZnAl2O4 nanostructures ( nanoparticles, nanonecklaces, nanofibers, nanotubes and hollow micromelts) were controllably synthesized by a single-nozzle electrospinning technique. The formation mechanisms of different ZnAl2O4 nanostructures, including 'oriented attachment' mechanism, 'gas-push' mechanism, etc., were proposed to elucidate the morphology of the nanostructures and microstructure evolvement process. The morphology and microstructure of calcined electrospun nanostructures were considered to be mainly dependent on two factors, i.e. concentration of inorganic salts and size of as-prepared electrospun nanofibers. Using Ni2+ ions as activators, broadband near infrared (NIR) emission covering 1000-1400 nm peaking at about 1176 nm was detected in Ni2+-doped ZnAl2O4 nanostructures. The broadband NIR emission at around 1.3 mu m optical communication window with a long lifetime of similar to 640 mu s makes Ni2+-doped ZnAl2O4 nanostructures as a promising candidate for micro/nano-broadband optical amplifiers, fibers, etc.

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