4.6 Article

Interface engineering for high-performance organic field-effect transistors

Journal

PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 14, Issue 41, Pages 14165-14180

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c2cp41712j

Keywords

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Funding

  1. National Natural Science Foundation of China [20721061, 51033006, 51222306, 51003107, 91027043]
  2. China-Denmark Co-Project (NSFC-DFG Transregio Project) [TRR61]
  3. Ministry of Science and Technology of China [2011CB808400, 2011CB932300]
  4. National Key Basic Research Program of China [2013CB933403]
  5. Chinese Academy of Sciences

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The performance of organic field-effect transistors (OFETs) depends not only on the properties of organic semiconductors, gate dielectrics and electrodes, but it is also determined by the nature of the contact interfaces between the different functional components. Therefore, interface engineering to optimize the contacts becomes critically important for the fabrication of high performance OFETs. In this Perspective, representative strategies of interface engineering and the basic requirements for different functional components to enable high performance OFETs are highlighted.

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