4.6 Article

Generation of clean iron nanocrystals on an ultra-thin SiOx film on Si(001)

Journal

PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 13, Issue 38, Pages 17333-17338

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c1cp20865a

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Funding

  1. DFG [MA 4246/1-2]
  2. COST Action [CM0601, D41]
  3. Cluster of Excellence Engineering of Advanced Materials

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Upon exposure to Fe(CO)(5), the formation of pure cubic Fe nanocrystals with dimensions up to similar to 75 nm is reported on ultra-thin SiOx films (thickness approximate to 0.5 nm) on Si(001), which have been prepared in situ under UHV conditions. The active centers for initial decomposition of Fe(CO)(5) resulting in the growth of the Fe clusters are proposed to be SiO sites. After nucleation at these sites, further crystal growth is observed due to autocatalytic dissociation of Fe(CO)(5) at room temperature. The density of the Fe clusters can be increased by irradiating the surface with a focused electron beam (15 keV) prior to gas exposure. The formation of the active SiO sites upon electron irradiation is attributed to oxygen desorption via the Knotek-Feibelman mechanism.

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