Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 13, Issue 34, Pages 15418-15422Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c1cp21544b
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Funding
- Australian Commonwealth Government
- Research Centre for Computational Science, National Institute of National Sciences, Japan
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We show that the properties of a new class of functional materials, silicon nanosheets modified with phenyl groups and H atoms, are highly promising for applications such as electronic devices. This novel material retains the sp(3) structure after functionalisation, resulting in a wide (direct) band gap of 1.92 eV.
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