Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 13, Issue 48, Pages 21243-21247Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c1cp22463h
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Funding
- National Natural Science Foundation of China [51171082, 51101088]
- Tianjin Key Technology RD Program [11ZCKFGX01300]
- Fundamental Research Funds for the Central Universities
- ARC (Australian Research Council) [DP0770987]
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The electrical and magnetic properties of Zn-doped Fe3O4 at different doping concentrations of Zn have been investigated using a density functional method with generalized-gradient approximation corrected for on-site Coulombic interactions. The electronic structure calculation predicts that ZnxFe3-xO4 (0 <= x <= 0.875) is half-metallic with a full spin polarization. The hopping carrier concentration of ZnxFe3-xO4 decreases with increasing x, which indicates a distinct increase in the resistivity. The saturation magnetization of ZnxFe3-xO4 increases evidently with increasing x from x = 0 to x = 0.75 (i.e. from 4.0 to 8.3 mu(B)/f.u.) and then decreases rapidly to zero at x = 1. The robust half-metallicity, large tunability of electrical and magnetic properties of a Zn doped Fe3O4 system make it a promising functional material for spintronic applications.
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