Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 11, Issue 20, Pages 3845-3848Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/b820559k
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Funding
- FP6
- BSF
- RBNI
- Deutsche Forschungsgemeinschaft (DFG) [CH159/1]
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Silicon nanowires (Si NWs) terminated with methyl functionalities exhibit higher oxidation resistance under ambient conditions than equivalent 2D Si(100) and 2D Si(111) surfaces having similar or 10-20% higher initial coverage. The kinetics of methyl adsorption as well as complementary surface analysis by XPS and ToF SIMS attribute this difference to the formation of stronger Si-C bonds on Si NWs, as compared to 2D Si surfaces. This finding offers the possibility of functionalising Si NWs with minimum effect on the conductance of the near-gap channels leading towards more efficient Si NW electronic devices.
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