Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 8, Issue 12, Pages 987-990Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201409426
Keywords
transparent conductive oxides; atomic layer deposition; solid-phase crystallization; silicon heterojunction solar cells; In2O3:H
Funding
- Dutch Technology Foundation STW/Flash Perspectief Programma
- Solliance
- Dutch province of Noord-Brabant
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The preparation of high-quality In2O3:H, as transparent conductive oxide (TCO), is demonstrated at low temperatures. Amorphous In2O3:H films were deposited by atomic layer deposition at 100 degrees C, after which they underwent solid phase crystallization by a short anneal at 200 degrees C. TEM analysis has shown that this approach can yield films with a lateral grain size of a few hundred nm, resulting in electron mobility values as high as 138 cm(2)/V s at a device-relevant carrier density of 1.8 x 10(20) cm(-3). Due to the extremely high electron mobility, the crystallized films simultaneously exhibit a very low resistivity (0.27 m Omega cm) and a negligible free carrier absorption. In conjunction with the low temperature processing, this renders these films ideal candidates for front TCO layers in for example silicon heterojunction solar cells and other sensitive optoelectronic applications. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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