Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 8, Issue 6, Pages 540-544Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201308310
Keywords
ReRAM; device simulation; electrochemical metallization memory
Funding
- Deutsche Forschungsgemeinschaft [SFB 917]
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In this Letter we discuss the SET/RESET current asymmetry of the bipolar resistive switching in electrochemical metallization cells based on an analytical switching model. The model is based on the growth and dissolution of a metallic filament. It accounts for the controllability of the low resistive state and the RESET current by tuning the SET current. Based on this model a possible physical explanation for the SET/RESET asymmetry is presented. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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