Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 8, Issue 8, Pages 714-718Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201409146
Keywords
layered materials; molybdenum disulfides; field-effect transistors; electrical stability
Funding
- MSIP (Ministry of Science, ICT and Future Planning), Korea, under the IT Consilience Creative Program [NIPA-2014-H0201-14-1002]
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The electrical stability of molybdenum disulfide (MoS2) transistors is crucial for their use in various applications. However, it is tricky to evaluate the inherent stability of MoS2 transistors because it is highly dependent on environmental conditions during measurement such as humidity, light, and electrical factors. We studied the threshold voltage instability under negative bias stress at a variety of temperatures in a vacuum and in the dark to eliminate any environmental effects. In particular, the measurement of transfer curves under stress is minimized in order to study the inherent instability of MoS2 transistors, even though the measurement of transfer curves is normally indispensable to check for the evolution of electrical instability. MoS2 transistors have high average effective energy when compared to conventional amorphous Si and oxide semiconductor transistors, which allows for adequate operation at high temperatures. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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