Electrical stability of multilayer MoS2 field-effect transistor under negative bias stress at various temperatures

The electrical stability of molybdenum disulfide (MoS2) transistors is crucial for their use in various applications. However, it is tricky to evaluate the inherent stability of MoS2 transistors because it is highly dependent on environmental conditions during measurement such as humidity, light, and electrical factors. We studied the threshold voltage instability under negative bias stress at a variety of temperatures in a vacuum and in the dark to eliminate any environmental effects. In particular, the measurement of transfer curves under stress is minimized in order to study the inherent instability of MoS2 transistors, even though the measurement of transfer curves is normally indispensable to check for the evolution of electrical instability. MoS2 transistors have high average effective energy when compared to conventional amorphous Si and oxide semiconductor transistors, which allows for adequate operation at high temperatures. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim