4.5 Article

Silicene on hydrogen-passivated Si(111) and Ge(111) substrates

Journal

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 7, Issue 8, Pages 538-541

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201307215

Keywords

silicene; group-IV semiconductors; surfaces; energetic stability; Dirac cone

Funding

  1. Carl-Zeiss Foundation
  2. DFG Graduate School 1525 Quantum and Gravitational Fields
  3. DAAD
  4. DFG Research Unit FOR 1700

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By means of first-principles calculations we predict the stability of silicene as buckled honeycomb lattice on passivated substrates of group-IV(111)1 x 1 surfaces. The weak van-der-Waals interaction between silicene and substrates does not destroy its linear bands forming Dirac cones at the Brillouin zone corners. Only very small fundamental gaps are opened around the Fermi level. [GRAPHICS] Silicene adsorbed on a hydrogen-passivated Si(111)1 x 1 surface (H: red, Si: blue). (c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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