Hall effect of tetragonal and orthorhombic SrRuO3 films

High quality orthorhombic and tetragonal SrRuO3 thin films were grown by pulsed laser deposition on SrTiO3(001) and Ba0.75Sr0.25TiO3 buffered LaAlO3(001) substrates. Resistivity vs. temperature curves showed a slope change at a Curie temperature of 147.5 +/- 2 K for 40 nm thick films irrespective of crystalline symmetry. The Hall resistivity of both films contained an anomalous Hall contribution. The anomalous Hall coefficient was positive throughout the whole temperature range for the tetragonal film, whereas it showed a sign change at 143 K for the orthorhombic film. This is a strong indication that the Berry-phase mechanism is the dominant anomalous Hall effect mechanism in SrRuO3. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim