Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 5, Issue 5-6, Pages 214-216Publisher
WILEY-BLACKWELL
DOI: 10.1002/pssr.201105190
Keywords
hexagonal boron nitride; photoluminescence; photoconductivity; excitons; band gap
Funding
- EU [II-20080156EC, ELISA-226716, ANR-06-NSCI-006, ANR-07-NANO-007-02]
- Synthelas of C'Nano (IdF)
- Grants-in-Aid for Scientific Research [23246116, 23310096, 22651056] Funding Source: KAKEN
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Near band gap photoluminescence (PL) of a hexagonal boron nitride single crystal has been studied at cryogenic temperatures with synchrotron radiation excitation. The PL signal is dominated by trapped-exciton optical transitions, while the photoluminescence excitation (PLE) spectra show features assigned to free excitons. Complementary photoconductivity and PLE measurements set the band gap transition energy to 6.4 eV and the Frenkel exciton binding energy larger than 380 meV. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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