Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 5, Issue 9, Pages 353-355Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201105338
Keywords
core-shell nanowires; doping; molecular beam epitaxy; GaAs; AlGaAs
Funding
- DFG
- collaborative research center [SFB 631]
- EU
- SNF [121758]
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Modulation doped AlGaAs/GaAs core-shell nanowire structures were grown by molecular beam epitaxy. A Si delta-doping was introduced in the AlGaAs shell around the {110} facets of the GaAs core. The wires are typically highly resistive at low temperatures. However, they show a pronounced persistent photoconductivity effect indicating activation of free carriers from the delta-doped shell to the GaAs core. The n-type character of the channel is demonstrated by applying a back-gate voltage. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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