Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates

We report on the growth properties of InAs, InP and GaAs nanowires (NWs) on different lattice mismatched substrates, in particular, on Si(111), during Au-assisted molecular beam epitaxy (MBE). We show that the critical diameter for the epitaxial growth of dislocation-free III-V NWs decreases as the lattice mismatch increases and equals 24 nm for InAs NWs on Si(111), 39 nm for InP NWs on Si(111), 44 nm for InAs NWs on GaAs(111)B, and 110 nm for GaAs NWs on Si(111). When the diameters exceed these critical values, the NWs are dislocated or do not grow at all. The corresponding temperature domains for NW growth extend from 320 degrees C to 340 degrees C for InAs NWs on Si(111), 330 degrees C to 360 degrees C for InP NWs on Si(111), 370 degrees C to 420 degrees C for InAs NWs on GaAs(111)B and 380 degrees C to 540 degrees C for GaAs NWs on Si(111). Experimental values for critical diameters are compared to the previous findings are discussed within the frame of a theoretical model. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim