Journal
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 255, Issue 12, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.201800182
Keywords
AlP barrier; GaP; InGaSb; MOVPE growth; nanoscale memory; quantum dots
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Funding
- DFG [BI284/29-2]
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The structural and optical properties of InGaSb/GaP(001) type-II quantum dots (QDs) grown by metalorganic vapor phase epitaxy (MOVPE) are studied. Growth strategies as growth interruption (GRI) after deposition of InGaSb and Sb-flush prior to QD growth are used to tune the structural and optical properties of InGaSb QDs. The Sb-flush affects the surface diffusion leading to more homogeneous QDs and to a reduction of defects. A ripening process during GRI occurs, where QD size is increased and QD-luminescence remarkably improved. InGaSb QDs are embedded in GaP n + p-diodes, employing an additional AlP barrier, and characterized electrically. A localization energy of 1.15 eV for holes in QDs is measured by using deep-level transient spectroscopy (DLTS). The use of Sb in QD growth is found to decrease the associated QD capture cross-section by one order of magnitude with respect to the one of In0.5Ga0.5As/GaP QDs. This leads to a hole storage time of almost 1 h at room temperature, which represents to date the record value for MOVPE-grown QDs, making MOVPE of InGaSb/GaP related QDs a promising technology for QD-based nano-memories.
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