Journal
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 250, Issue 2, Pages 278-282Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.201200529
Keywords
inhomogeneous broadening; ion implantation; optical centers in diamond; zero-phonon line
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Funding
- PSC-CUNY
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Optically active defects in diamond find a wide range of applications from lasers to single photon emitters essential for quantum communications. Ion implantation followed by thermal annealing is a mature technique used to create such defects. Implanted at a fixed energy, ions form a thin layer of optically active defects. Low temperature photoluminescence spectra of Xe-related defects in pure CVD diamond show peculiar behavior: the narrow zero-phonon line at 811.7nm changes its shape significantly with the increase of implantation dose from 1.1x1011 to 5x1012ioncm2. This work investigates the possible causes of this effect: planar geometry of the defects distribution and/or the complex defect structure.
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