4.3 Article

Growth and characterization of nitride-based distributed Bragg reflectors

Journal

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 248, Issue 8, Pages 1748-1755

Publisher

WILEY-BLACKWELL
DOI: 10.1002/pssb.201147174

Keywords

AlGaN; AlInN; Bragg reflectors; MBE; MOVPE; nitrides

Funding

  1. German Research Foundation (DFG) [FOR 506]

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We report on a systematic study concerning the realization of nitride-based distributed Bragg reflectors (DBRs) for opto-electronic applications in the near-UV to visible spectral range. Different material combinations are used in order to find an optimized tilde-off concerning peak reflectivity, stop band width, and strain state of the Bragg mirrors. For the high refractive index material GaN is used in all cases, while for the low index material a layer of either AlGaN or AMIN, respectively, or a AlN/(In)GaN short-period superlattice (SL) is employed. The best peak reflectivity of 97% at a wavelength of 495 nm is achieved for a lattice matched Bragg reflector based on the GaN/AlInN material combination. [GRAPHICS] (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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