Journal
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 248, Issue 3, Pages 600-604Publisher
WILEY-BLACKWELL
DOI: 10.1002/pssb.201046334
Keywords
GaInN; metal-organic vapor phase epitaxy; photoluminescence; quantum wells; X-ray diffraction
Categories
Funding
- DFG
- ERA-SPOT
- Braunschweig International Graduate School of Metrology (IGSM)
Ask authors/readers for more resources
GaInN/GaN multiple quantum well structures grown on polar and nonpolar surfaces have been compared with respect to the indium incorporation efficiency in the quantum wells (QWs). Under the same growth conditions X-ray diffraction measurements reveal similar growth rates and In concentrations for c-plane, a-plane, and m-plane with In contents up to 40%. These results are in good agreement with optical experiments, in particular for homoepitaxial growth. However, there is strong evidence that the optical properties of the nonpolar heteroepitaxial GaInN QWs are dominated by the high density of stacking faults in those samples. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available