Journal
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 247, Issue 9, Pages 2179-2184Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.200945550
Keywords
infrared spectroscopy; lattice properties; silicon monoxide
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Funding
- Institute of Theoretical Astrophysics (Heidelberg University)
- Deutsche Forschungsgemeinschaft [FOR 759]
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The growth of ultrathin SiO layers on clean Si(111) was observed by in situ infrared spectroscopy under ultra-high vacuum conditions. SiO was deposited by thermal evaporation of SiO powder from a Knudsen cell. A large shift of the SiO main vibrational line, from about 864 cm(-1) for sub-monolayer coverage up to the bulk value of SiO at about 982 cm(-1) for thicknesses above 10A, was observed. The extraordinary low vibrational frequencies for species at the SiO-Si interface corroborate recently published theoretical results for SiO adsorption on Si and for the SiO2-Si interface. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheiminfrared spectroscopylattice propertiessilicon monoxide
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