Journal
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 246, Issue 2, Pages 402-406Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.200844342
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- Japanese Society for the Promotion of Science
- Ministry of Education, Culture, Sports and Technology, Japan
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We performed a comparison study of electrically active defects generated in single and double ion implanted 4H-SiC epilayers. Capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements revealed that double implantation, is responsible for a different compensation mechanism of the net acceptor concentration, and for the different nature and annealing behavior of the detected deep levels. (c) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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