Carrier density and effective mass calculations in carbon nanotubes

In this work, the intrinsic carrier concentration and doping effects have been investigated for different carbon nanotubes. Electronic structure and the density of states functions have been utilized to derive analytical equations for the carrier concentration under high and low doping concentrations. The temperature dependence has also been investigated. The results show how varying diameters and wrapping angles of carbon nanotubes change their concentration profile. The implications of these results allow us to use the same material (carbon nanotube) for a wide range of applications only by varying the chiral vector (n,m). The calculations performed in this work set all upper limit for a wide range of applications including carbon nanotube interconnects and carbon nanotube field effect transistors. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim