Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 216, Issue 5, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201800198
Keywords
amorphous gallium oxide; amorphous oxide semiconductors; rare-earth free; thin-film phosphor; transition metal
Funding
- Ministry of Education, Culture, Sports, Science and Technology (MEXT) though Element Strategy Initiative to Form Core Research Center
- Japan Society for the Promotion of Science (JSPS) [25106007, 17H01318, 18H01700]
- Support for Tokyotech Advanced Research (STAR)
- JSPS [17K14548, 18K13990, 16K14377]
- PRESTO, JST [JPMJPR16R1]
- [15H05543]
- Grants-in-Aid for Scientific Research [18K13990, 17K14548] Funding Source: KAKEN
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Transition metal (TM)-doped amorphous gallium oxide (a-GO:TMx) is studied as an inorganic thin-film phosphor. Cr is selected as an emission center based on preliminary screening. The most intense red photoluminescence (PL) with a broad emission band of 620-800 nm from the a-GO:Cr-x films deposited at room temperature is attained by optimizing the Cr concentration (x = 0.001) and the oxygen partial pressure (P-O2 = 10 Pa) during the film growth. Post-deposition thermal annealing at 400 degrees C in O-2, which is lower than the crystallization temperature, improves internal quantum efficiency (IQE) of PL to 0.3%. Crystallized films by 800 degrees C annealing further improves the IQE to 20%. The improvement of PL by crystallization is commonly observed for conventional inorganic phosphors, but opposite to that of previously reported rare-earth (RE)-doped a-GO:REx thin-film phosphors. It is explained by different solubility of Cr and RE in the beta-Ga2O3 host.
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