Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 211, Issue 12, Pages 2854-2860Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201431236
Keywords
III-V semiconductors; high electron mobility transistors; molecular beam epitaxy; AlN; AlGaInN; interfaces
Funding
- Federal Ministry of Defense (BMVg), Bonn
- Bundeswehr Technical Center of Information Technology and Electronics (WTD81), Greding
- Federal Ministry of Education and Research (BMBF), Bonn
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Heterostructures with lattice matched Al(Ga)InN barriers have been widely investigated as alternative to standard AlGaN/GaN based high electron mobility transistor structures for high power applications. Mostly these heterostructures comprise a thin AlN based spacer between GaN channel and lattice matched barrier. One key issue for high quality plasma-assisted molecular beam epitaxy (PA-MBE) of these structures is the control of the AlN-Al(Ga)InN interface since optimal growth conditions for high quality AlN differ significantly from those for growth of indium containing material. In this paper, a detailed analysis and a deduced model of the interface growth is presented. The Al/N ratio during AlN spacer growth is likely to influence the subsequent growth of quaternary Al(Ga)InN. Ideal Al/N ratio leads to high performance heterostructures, while slightly Al-rich conditions lead to the formation of Al residues on the substrate surface, which hinder subsequent epitaxial growth. Al/N ratios below unity lead to the deposition of ternary AlGaN instead of binary AlN spacers and to increased alloy scattering. An insertion of a thin GaN layer between spacer and barrier can hinder the formation of Al residues and leads to improved wafer homogeneity. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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