Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 211, Issue 9, Pages 2172-2176Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201431232
Keywords
CuInSe2; long-pass filter; sputtered-CdS; sputtered-Zn(O,S); thermal stability
Funding
- Ministry of Science, ICT and Future Planning (MSIP)
- Korea Research Council for Industrial Science and Technology (ISTK)
- Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Ministry of Trade, Industry and Energy (MOTIE) [20119010100010, 20123030010030]
- Technology Innovation Program - Ministry of Trade, Industry and Energy (MOTIE) [10047001]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20119010100010, 20123030010030] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The sputtered-Zn(O,S) and -CdS films were prepared as a buffer layer in CuInSe2 (CIS) in the bottom cell of a Cu(In,Ga) Se-2 (CIGS)-tandem-structured solar cell. We characterized the thermal stability and long wavelength response of the CIS solar cell. The thermal stability of CIS solar cell is tested in increasing annealing temperature up to 500 degrees C in a vacuum for 60 min. The optical response of CIS solar cell was measured by using long-wavelength pass filter to verify availability as a bottom cell. The power conversion efficiency (PCE) of the sputtered-Zn(O,S)/CIS cell showed a slight drop from 9.73% as-fabricated to 9.61% after 60 min of annealing at 300 degrees C, whereas the 7.97% as-fabricated PCE of the sputtered-CdS/CIS cell fully deteriorated above 300 degrees C at 60 min of annealing. The PCE of as-fabricated-Zn(O,S)/CIS was 5.46% by using the selective 715 nm long-pass filter. This value remains almost unchanged after post-annealing, whereas the 4.36% PCE of as-fabricatedCdS/CIS solar cell by using the 715 nm long-pass filter continuously dropped after 60 min of 300 degrees C annealing. The high-temperature-stability of the Zn(O,S) buffer was attributed to the smaller diffusivity of Zn atoms than that of Cd atoms. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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