Related references
Note: Only part of the references are listed.Effect of heat treatment on properties of melt-grown bulk In2O3 single crystals
Zbigniew Galazka et al.
CRYSTENGCOMM (2013)
Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In2O3 films
Natalie Preissler et al.
PHYSICAL REVIEW B (2013)
Mg acceptor doping of In2O3 and overcompensation by oxygen vacancies
Oliver Bierwagen et al.
APPLIED PHYSICS LETTERS (2012)
Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides
J. B. Varley et al.
PHYSICAL REVIEW B (2012)
High electron mobility In2O3(001) and (111) thin films with nondegenerate electron concentration
Oliver Bierwagen et al.
APPLIED PHYSICS LETTERS (2010)
Nucleation of islands and continuous high-quality In2O3(001) films during plasma-assisted molecular beam epitaxy on Y-stabilized ZrO2(001)
Oliver Bierwagen et al.
JOURNAL OF APPLIED PHYSICS (2010)
Limits for n-type doping in In2O3 and SnO2: A theoretical approach by first-principles calculations using hybrid-functional methodology
Peter Agoston et al.
JOURNAL OF APPLIED PHYSICS (2010)
Plasma-assisted molecular beam epitaxy of high quality In2O3(001) thin films on Y-stabilized ZrO2(001) using In as an auto surfactant
Oliver Bierwagen et al.
APPLIED PHYSICS LETTERS (2009)
The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy
A. Bourlange et al.
JOURNAL OF APPLIED PHYSICS (2009)
Investigation of (110) SnO2 growth mechanisms on TiO2 substrates by plasma-assisted molecular beam epitaxy
M. Y. Tsai et al.
JOURNAL OF APPLIED PHYSICS (2009)
Polaronic hole localization and multiple hole binding of acceptors in oxide wide-gap semiconductors
Stephan Lany et al.
PHYSICAL REVIEW B (2009)
Plasma-assisted molecular beam epitaxy of SnO2 on TiO2
M. Y. Tsai et al.
JOURNAL OF CRYSTAL GROWTH (2008)
Control of ferromagnetism via electron doping in In2O3:Cr
Hannes Raebiger et al.
PHYSICAL REVIEW LETTERS (2008)
Surface electron accumulation and the charge neutrality level in In2O3
P. D. C. King et al.
PHYSICAL REVIEW LETTERS (2008)
Comparative studies of transparent conductive Ti-, Zr-, and Sn-doped In2O3 using a combinatorial approach
T. Koida et al.
JOURNAL OF APPLIED PHYSICS (2007)
Surface states, surface potentials, and segregation at surfaces of tin-doped In2O3
Y. Gassenbauer et al.
PHYSICAL REVIEW B (2006)
Carrier-controlled ferromagnetismin transparent oxide semiconductors
J Philip et al.
NATURE MATERIALS (2006)
Highly electrically conductive indium-tin-oxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser deposition
H Ohta et al.
APPLIED PHYSICS LETTERS (2000)
Share Paper
