Related references
Note: Only part of the references are listed.High-Power (over 100 mW) Green Laser Diodes on Semipolar {20(2)over-bar1} GaN Substrates Operating at Wavelengths beyond 530 nm
Shimpei Takagi et al.
APPLIED PHYSICS EXPRESS (2012)
444.9 nm semipolar (11(2)over-bar2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
Po Shan Hsu et al.
APPLIED PHYSICS LETTERS (2012)
Performance and polarization effects in (11(2)over-bar2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
Ingrid L. Koslow et al.
APPLIED PHYSICS LETTERS (2012)
Trace analysis of non-basal plane misfit stress relaxation in (20(2)over-bar1) and (30(3)over-bar(1)over-bar) semipolar InGaN/GaN heterostructures
Matthew T. Hardy et al.
APPLIED PHYSICS LETTERS (2012)
Gallium Indium Nitride-Based Green Lasers
Dmitry Sizov et al.
JOURNAL OF LIGHTWAVE TECHNOLOGY (2012)
Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices
R. M. Farrell et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2012)
Beyond blue pico laser: development of high power blue and low power direct green
Clemens Vierheilig et al.
NOVEL IN-PLANE SEMICONDUCTOR LASERS XI (2012)
60 mW Pulsed and Continuous Wave Operation of GaN-Based Semipolar Green Laser with Characteristic Temperature of 190 K
Dmitry Sizov et al.
APPLIED PHYSICS EXPRESS (2011)
Optical Gain Spectroscopy of a Semipolar {20(2)over-bar1}-Oriented Green InGaN Laser Diode
Yoon Seok Kim et al.
APPLIED PHYSICS EXPRESS (2011)
Misfit dislocation formation via pre-existing threading dislocation glide in (11(2)over-bar2) semipolar heteroepitaxy
Po Shan Hsu et al.
APPLIED PHYSICS LETTERS (2011)
A simple theoretical approach to analyze polarization properties in semipolar and nonpolar InGaN quantum wells
Atsushi A. Yamaguchi et al.
APPLIED PHYSICS LETTERS (2011)
Carrier Transport in InGaN MQWs of Aquamarine-and Green-Laser Diodes
Dmitry S. Sizov et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2011)
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
Alexey E. Romanov et al.
JOURNAL OF APPLIED PHYSICS (2011)
Pros and cons of green InGaN laser on c-plane GaN
Uwe Strauss et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2011)
Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells
L. Schade et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2011)
Internal Optical Waveguide Loss and p-Type Absorption in Blue and Green InGaN Quantum Well Laser Diodes
Dmitry S. Sizov et al.
APPLIED PHYSICS EXPRESS (2010)
Critical Thickness for Onset of Plastic Relaxation in (11(2)over-bar2) and (20(2)over-bar1) Semipolar AlGaN Heterostructures
Erin C. Young et al.
APPLIED PHYSICS EXPRESS (2010)
High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates
James W. Raring et al.
APPLIED PHYSICS EXPRESS (2010)
Low Threshold Current Density InGaN Based 520-530nm Green Laser Diodes on Semi-Polar {20(2)over-bar1} Free-Standing GaN Substrates
Masahiro Adachi et al.
APPLIED PHYSICS EXPRESS (2010)
Antiguiding factor of GaN-based laser diodes from UV to green
W. G. Scheibenzuber et al.
APPLIED PHYSICS LETTERS (2010)
InGaN-based 518 and 488nm laser diodes on c-plane GaN substrate
Takashi Miyoshi et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2010)
Nonpolar and Semipolar Group III Nitride-Based Materials
J. S. Speck et al.
MRS BULLETIN (2009)
Share Paper
