Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 210, Issue 9, Pages 1822-1827Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201329021
Keywords
memory; PECVD; resistive switching; Si3N4; sputtering
Funding
- Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology (MEST) [2012-00109]
- Samsung Semiconductor Research Center of Korea University
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A forming-free SiN-based resistive switching memory (RSM) device has been successfully realized using an RF sputtering method. With a 10-nm thick SiN film, the memory device showed forming-free switching behavior under +/- 2V/100ns. The conduction mechanisms at low- and high-resistance states were verified by Ohmic behavior and modified space-charge-limited conduction, respectively. In a reliability test, the device exhibits good endurance over 10(9) cycles and long data retention over 10(5)s at 85 degrees C. These results demonstrate that SiN-based RSM devices can be readily available without forming processes using an RF sputtering method. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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