Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 210, Issue 10, Pages 1961-1975Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201300385
Keywords
diamond; electron emission; exciton; hopping conduction; NEA; PIN diode; vacuum power switch
Funding
- New Energy and Industrial Technology Development Organization (NEDO) of Japan
- JSPS [21360174]
- IBEC Innovation Platform, AIST
- Grants-in-Aid for Scientific Research [21360174] Funding Source: KAKEN
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This paper reviews the electron emission properties of hydrogen terminated diamond surfaces with a negative electron affinity (NEA), and presents the recent development of 10kV vacuum switches based on diamond PIN junction electron emitters that utilize such NEA surfaces. The background to this topic, including the electron emission mechanism through NEA, the electronic states of diamond with free excitons, and free carrier injection from a heavily doped layer with hopping conduction into a high purity intrinsic layer with band conduction, is also discussed. Our 10kV vacuum power switch featuring an NEA diamond PIN junction electron emitter exhibited a breakthrough power transmission efficiency of 73% at 9.8kV. This result validates the principle of such vacuum power switches, which have the potential to operate at 100kV with an efficiency beyond 99.9%.
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