4.4 Article

The roles of thermalized and hot carrier diffusion in determining light yield and proportionality of scintillators

Journal

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201200436

Keywords

hot electron; nonproportionality; scintillator; thermalized diffusion

Funding

  1. National Nuclear Security Administration, Office of Nonproliferation Research and Development of the U.S. Department of Energy [NA-22, DE-NA0001012, DE-AC02-05CH11231]
  2. Direct For Education and Human Resources
  3. Division Of Human Resource Development [930018] Funding Source: National Science Foundation
  4. Division Of Astronomical Sciences
  5. Direct For Mathematical & Physical Scien [849736] Funding Source: National Science Foundation
  6. Division Of Human Resource Development
  7. Direct For Education and Human Resources [932038] Funding Source: National Science Foundation

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Numerical modeling and comparison to experiment in the materials for which suitable parameters have been measured confirm that three of the most important material parameters for predicting proportionality and the related host-dependent light yield (LY) of scintillators are (i) the carrier diffusion coefficients (including hole self-trapping if present, and hot-electron diffusion if unthermalized), (ii) the kinetic order and associated rate constant of nonlinear quenching, and (iii) deep-trapping probability. Thermalized carrier diffusion appears sufficient to describe the main trends in oxides and semiconductors. For heavier halide hosts, it appears necessary to take account of hot-electron diffusion to explain several important host-dependent trends. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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