Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 209, Issue 5, Pages 972-976Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201127460
Keywords
FETs; humidity effect; nanowires; ZnO
Funding
- Mid-career Researcher Program [2010-0000160]
- Priority Research Centers Program [2011-0030745]
- National Research Foundation of Korea (NRF) by the Ministry of Education, Science, and Technology
- Ajou University
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Changes in the electrical characteristics of individual ZnO nanowire (NW) devices when they are exposed to wet air (80% relative humidity, RH) at room temperature are investigated. Significant roughening on the surface of ZnO NWs is observed after they are exposed to wet air for more than tens of hours. I-V characteristics taken after exposure to humidity show positive shifts of the threshold voltages in ZnO NW field effect transistors (FETs), which indicate depletion of carriers. These results have implication about the long-term stability of such devices when they need to be in direct contact with the ambient environment for their operations. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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