Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 208, Issue 9, Pages 2231-2234Publisher
WILEY-BLACKWELL
DOI: 10.1002/pssa.201127243
Keywords
amorphous InGaZnO; annealing; positive bias temperature stress; thin film transistors
Funding
- National Research Foundation of Korea (NRF)
- Korean Ministry of Education, Science, and Technology (MEST) [2007-0055837]
- National Research Foundation of Korea [2007-0055837] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The effects of high-pressure annealing were investigated using amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The fabricated device annealed at 5 atm in H2O ambient showed the best electrical characteristics and stability under positive bias temperature stress (PBTS). This was attributed to mainly a reduction in the band bending at the overlap between the source drain (S/D) electrodes and the etch stop layer (ESL). This is originated from the recovery of charge-trapping sites at in- and bottom-ESLs due to defect passivation with the aid of high-pressure thermal annealing at 5 atm in H2O ambient. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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