Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 208, Issue 9, Pages 2226-2230Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201127189
Keywords
laser fabrication; LED; light extraction; p-GaN patterning
Funding
- National Science Foundation of China (NSFC) [50702031, 60974117, 81070223]
- Excellent Young Investigators Award Foundation of Shandong Province [BS2009CL021]
- SRF for ROCS
- State Education Ministry
- National Basic Research Program of China (973 Program) [2009CB930503]
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We report here the laser patterned Ga-polar p-GaN surface to improve the light extraction efficiency of GaN based blue light emitting diodes (LEDs) by using a pulsed UV laser in combination with a mirror scanner. The patterns created on p-GaN are confirmed to be suitable for light extraction and a 34.9% enhancement of the electroluminescent (EL) emission intensity has been obtained. Detailed discussions on the effects of laser on LEDs and the angular dependence of the emission profile are also provided. This method could be extended to other III-V LEDs and LEDs on SiC for fabricating highly efficient LEDs. [GRAPHICS] The schematic of laser fabrication equipment, SEM image of patterned p-GaN surface and guided-modes extraction photograph of patterned GaN epilayer. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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