Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 207, Issue 10, Pages 2217-2225Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201026149
Keywords
Auger recombination; efficiency droop; GaN; light-emitting diodes; quantum efficiency
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Nitride-based light-emitting diodes (LEDs) suffer from a reduction (droop) of the internal quantum efficiency with increasing injection current. This droop phenomenon is currently the subject of intense research worldwide, as it delays general lighting applications of GaN-based LEDs. Several explanations of the efficiency droop have been proposed in recent years, but none is widely accepted. This feature article provides a snapshot of the present state of droop research, reviews currently discussed droop mechanisms, contextualizes them, and proposes a simple yet unified model for the LED efficiency droop. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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