Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 208, Issue 2, Pages 425-428Publisher
WILEY-BLACKWELL
DOI: 10.1002/pssa.201000432
Keywords
molecular beam epitaxy; self-assembly; strain compensation; quantum dot
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Highly-stacked InAs quantum dots (QDs) were successfully grown on InP(311) B substrates using a novel strain-compensation technique. The number of stacked layer was increased to 300, the density of the QDs reaches 2 x 10(13)/cm(2); this value cannot be obtained using conventional QD fabrication techniques. In a highly stacked sample, the QDs show good size uniformity with a lateral and vertical ordered structure. In addition, this sample exhibits strong 1.55 mu m photoluminescence (PL) emission at room temperature. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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