Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 207, Issue 6, Pages 1437-1449Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.200983771
Keywords
integrated circuits; MESFET; MISFET; transparent conductive oxides; transparent electronics; thin film transistors; ZnO
Funding
- Deutsche Forschungsgemeinschaft [Sonderforschungsbereich 762]
- Leipzig Graduate School of Natural Sciences
- European Social Fund (ESF)
- Studienstiftung des deutschen Volkes
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Transparent conductive oxides (TCOs) are a well-known material class allowing Ohmic conduction. A large free carrier concentration in the 10(21)cm(-3) range and high conductivity (beyond 10(4)S/cm) is feasible simultaneously with high transparency. Applications are manifold and include touch screens and front contacts for displays or solar cells. Transparent semiconducting oxides (TSO) are oxides with an intermediate free carrier concentration (typically 10(14)-10(18)cm(-3)) allowing the formation of depletion layers. We review recent results on TSO-based transistors and inverters. Most work has been reported on MISFETs. We show that MESFETs exhibit high performance and low voltage operation of oxide electronics. MESFET-based inverters offer superior performance compared to results reported for TSO MISFET-based circuits. [GRAPHICS] Optical image of inverter based on thin film MESFETs with Mg0.003Zn0.997O channels (left) and experimental inverter characteristic for supply voltage of V-DD = +2.0 V (right). (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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