Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 207, Issue 11, Pages 2492-2498Publisher
WILEY-BLACKWELL
DOI: 10.1002/pssa.201026400
Keywords
annealing; MOCVD; physical properties; SrRuO3; thin films
Funding
- Alexander von Humboldt Foundation (AvH)
- German Federal Government
- Land Berlin
Ask authors/readers for more resources
We report on the annealing effects on strontium ruthenate thin films deposited on SrTiO3 using liquid-delivery metalorganic chemical vapor deposition (MOCVD). The results of high resolution X-ray diffraction (HR-XRD), Raman spectroscopy, atomic force microscopy (AFM), and electrical resistivity, before and after a post-growth annealing process were analyzed and compared. XRD and Raman spectroscopy for the as-deposited film revealed that the film had c-axis orientation and contained RuO2 as secondary phase. Single phase SrRuO3 could be obtained by annealing the film at 700 degrees C. Annealing at higher temperatures up to 850 degrees C leads to ruthenium deficiency, which is revealed by an increase in the out-of-plane lattice parameter, while at even higher annealing temperatures a decrease in the out-of-plane lattice parameter was detected might be due to diffusion of Ti from the substrate. The electrical resistivity increased with increasing annealing temperatureup to 950 degrees C and showed typical metallic temperature dependence, while for the film annealed at 1000 degrees C a semiconductor-like behavior was observed. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available