Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 207, Issue 5, Pages 1062-1065Publisher
WILEY-BLACKWELL
DOI: 10.1002/pssa.200983104
Keywords
InN films; MBE; optical anisotropy; VUV spectra
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Wurtzite A- and M-plane InN films were grown by molecular beam epitaxy (MBE) on free-standing GaN substrates. Spectroscopic ellipsometry (SE) in the photon energy range from 0.56 up to 15 eV was applied in order to determine the ordinary and extraordinary complex dielectric function (DF) of InN. A distinct optical anisotropy was found over the whole energy range. The extraordinary absorption edge in comparison to the ordinary one is shifted to higher energies confirming previous studies. The investigations in the upper vacuum-ultraviolet (VUV) spectral range (9.5-15 eV) yielded transition energies for four critical points (CPs) of the band structure (BS) which have not been observed so far. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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