Investigation of ZnO as a perspective material for photonics

Emissive properties of ZnO are of great interests in terms of the UV LED device design. The persistent green luminescence due to deep defect is an obstacle for obtaining an intense UV emission, expected from ZnO. We report the positive role of thermally diffused H toward quenching the defect emission in ZnO. It is suggested that hydrogen passivates defects responsible for DLE, resulting in efficient near band edge luminescence. As-grown ZnO/SiNx :H/Si films, deposited at 350 degrees C demonstrate intense narrow peaks of UV emission at 380 nm and a ratio of emission intensities, NBE/DLE approximate to 42. [GRAPHICS]