4.4 Article

A new architecture for self-organized silicon nanowire growth integrated on a ⟨100⟩ silicon substrate

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WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.200723522

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A lithography-independent method for achieving self-organized growth of silicon nanowires by means of a Chemical-Vapor-Deposition process is investigated using a nanoporous alumina template on a < 100 > oriented silicon substrate. The position of the nanowires is determined by the location of gold colloids, acting as catalysts, which are initially deposited at the bottom of the pores over large areas of the sample. The direction of growth is guided by the pore axis, which is perpendicular to the silicon substrate surface. Results from scanning and transmission electron microscopy are presented and discussed. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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