Journal
PHYSICA SCRIPTA
Volume 85, Issue 5, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0031-8949/85/05/055806
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Funding
- National 863 Program of China [2004AA513020]
- NSFC
- Tianjin Natural Science Foundation [11JCYBJC01200]
- [61076061]
- [60906033]
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In this work, we deposit the chalcopyrite semiconductor CuInxGa1-xSe2 (CIGS) thin films using a three-stage co-evaporation process below 450 degrees C. It is observed that when the soda-lime glass substrate is replaced by polyimide, the conversion efficiency of this CIGS device changes from 11.12% down to 9.1%, and this efficiency decrease results mainly from the different open-circuit voltage (V-oc). Temperature-dependent current-voltage measurements are carried out, from which the activation energy is extracted; furthermore, the dominant recombination mechanisms as well as paths are determined, and finally the reason for the different V-oc is analyzed.
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