Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume 44, Issue 7-8, Pages 1503-1509Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physe.2012.03.018
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Funding
- ARO MURI Grant [W911NF-11-1-0268]
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Optimal design applied to an Al xi Ga1-xi As heterostructure tunnel diode is used to achieve a parametrically defined nonlinear current-voltage characteristic. The design predicts that a significant reduction in spurious frequency components from a switching RF mixer can be realized using a device that is less than 17 nm thick. (c) 2012 Elsevier B.V. All rights reserved.
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