Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume 42, Issue 10, Pages 2673-2675Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physe.2010.04.004
Keywords
Spin injection; Spin-Esaki-Zener diode; TAMR; TASP
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We report here on in-plane anisotropy observed in the tunneling magnetoresistance of (Ga,Mn)As/n(+)-GaAs Esaki diode contacts and in the spin polarization generated in lateral all-semiconductor, all-electrical spin injection devices, employing such Esaki-diode structures as spin aligning contacts. The uniaxial component of the registered anisotropies, observed along [110] directions, does switch its sign as an effect of the applied bias, however the switching occurs at different bias values for magnetoresistance and for spin polarization cases. (C) 2010 Elsevier B.V. All rights reserved.
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