Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume 41, Issue 7, Pages 1164-1168Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physe.2009.01.016
Keywords
Transparent conducting oxide (TCO); Atom beam sputtering; GAXRD; TEM; UV-vis spectroscopy; XPS
Funding
- Indian Institute of technology Delhi
- Inter University Accelerator Centre, New Delhi
- UGC-DAE Consortium for Scientific Research (UGC-DAE CSR)
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We report the preparation of pure zinc oxide (ZnO) and nickel-doped zinc oxide thin films (similar to 100 nm) by fast atom beam (FAB) sputtering technique and their characterisation in the perspective of transparent conducting oxide (TCO). Grazing angle X-ray diffraction (GAXRD) reveals that the films are polycrystalline, which has been further confirmed by selected area diffraction (SAD) studies, The nanogranular nature of the films is examined by transmission electron microscopy (TEM). A high optical transmittance ( > 87%) across UV-vis range and quite low electrical resistivity (similar to 1 x 10(-3) Omega cm) have been observed in the undoped ZnO films. In Ni-doped ZnO (ZnO:Ni) films the optical transmittance decreases and resistivity increases, which subsequently further affected by an increase in Ni content, Charge carrier concentration. which is the highest in undoped film, reduces after Ni doping. The X-ray photoelectron spectroscopy (XPS) results show that zinc and nickel are in 2+ state. High electrical conductivity of undoped film is explained on the basis of presence of oxygen vacancies deduced from O1s spectra of the films. Decrease of electrical conductivity due to nickel doping is explained on the basis of compensation of oxygen vacancies. (C) 2009 Elsevier B.V. All rights reserved.
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