Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume 42, Issue 2, Pages 172-175Publisher
ELSEVIER
DOI: 10.1016/j.physe.2009.10.005
Keywords
Density functional theory; SiC nanotube; Electronic structure
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By using ab initio density functional theory, the structural and electronic properties of (n, n)@(11, 11) double-walled silicon carbide nanotubes (SiCNTs) are investigated. Our calculations reveal the existence of an energetically favorable double-walled nanotube whose interwall distance is about 4.3 angstrom. Interwall spacing and curvature difference are found to be essential for the electronic states around the Fermi level. (C) 2009 Elsevier B.V. All rights reserved.
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