Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume 41, Issue 2, Pages 278-281Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physe.2008.07.016
Keywords
Turning point; Spherical dot; Impurity; Normalized binding energy
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Using a variational procedure within the effective-mass approximation we calculate the binding and normalized binding energy (NEbF) of a shallow donor impurity in a GaAs/AlAs spherical quintum dot, under the action of constant uniform electric field applied in the z-direction. A proper choice of the dot radius and electric field call largely change NEbF of a centre shallow impurity in the spherical quantum dot, which may be used to feel the small change in the dot radius. (C) 2008 Elsevier B.V. All rights reserved.
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