Critical concentrations of superconductor to insulator transition in (111) and (001) CVD boron-doped diamond

The superconducting transition temperatures (T-C) of (1 1 1) and (0 0 1) boron-doped diamond films deposited by microwave plasma assisted chemical vapor deposition (MPCVD) are investigated in the wide boron concentration range of 1 x 10(20) - 1 x 10(22) cm(-3). The critical boron concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) films are 3 x 10(20) cm(-3). T-C in (1 1 1) films does not have the tendency to saturate up to 1 x 10(22) cm(-3), while T-C in (0 0 1) films saturates. (C) 2010 Elsevier B.V. All rights reserved.